? 2006 ixys all rights reserved g = gate d = drain s = source tab = drain ds99595e(10/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 50 a 3.0 5.5 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 5.0 6.0 note 1 polarhv tm power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixta2n80p ixtp2n80p IXTU2N80P ixty2n80p v dss = 800 v i d25 =2a r ds(on) 6 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c2a i dm t c = 25 c, pulse width limited by t jm 4a i ar t c = 25 c2a e ar t c = 25 c10mj e as t c = 25 c 100 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 30 p d t c = 25 c70w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 3 g to-263 2.5 g to-252 0.35 g to-251 0.4 g to-263 (ixta) g s (tab) to-220 (ixtp) d (tab) g s to-252 (ixty) g s (tab) to-251 (ixtu) (tab) d g s
ixys reserves the right to change limits, test conditions, and dimensions. ixta2n80p ixtp2n80p IXTU2N80P ixty2n80p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , note 1 1.4 2.4 s c iss 440 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 36 pf c rss 4.4 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 35 ns t d(off) r g = 30 (external) 53 ns t f 28 ns q g(on) 10.6 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 3.7 nc q gd 4.5 nc r thjc 1.80 c/w r thcs (to-220) 0.25 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 2 a i sm repetitive 6 a v sd i f = i s , v gs = 0 v, pulse test 1.5 v t rr i f = 2 a, -di/dt = 100 a/ s, 650 ns v r = 100 v, v gs = 0 v to-263 (ixta) outline to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle d 2 %
? 2006 ixys all rights reserved fig. 1. output characteristics @ 25oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 024681012 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 0.5 1 1.5 2 2.5 3 3.5 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ 125oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 10121416182022242628 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 1a value vs. junction temperature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 2a i d = 1a fig. 5. r ds(on) normalized to i d = 1a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 00.5 11.522.5 33.5 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes ixta2n80p ixtp2n80p IXTU2N80P ixty2n80p
ixys reserves the right to change limits, test conditions, and dimensions. ixta2n80p ixtp2n80p IXTU2N80P ixty2n80p fig. 7. input admittance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 4 4.4 4.8 5.2 5.6 6 6.4 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0123456789101112 q g - nanocoulombs v gs - volts v ds = 400v i d = 1a i g = 10ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal resistance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 pulse w idth - seconds r (th)jc - oc / w ixys ref: t_2n80p (2j) 8-07-06.xls
? 2006 ixys all rights reserved to-251 (ixtu) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 .086 .094 a1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 d 5.97 6.22 .235 .245 e 6.35 6.73 .250 .265 e 2.28 bsc .090 bsc e1 4.57 bsc .180 bsc h 17.02 17.78 .670 .700 l 8.89 9.65 .350 .380 l1 1.91 2.28 .075 .090 l2 0.89 1.27 .035 .050 1. gate 2. drain 3. source to-252 (ixty) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 pins: 1 - gate 2,4 - drain 3 - source ixta2n80p ixtp2n80p IXTU2N80P ixty2n80p
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